3 billion yuan, another semiconductor IDM project started

Recently, Nanqiao District, Chuzhou, Anhui, held a major project intensive start in October and a groundbreaking ceremony for Huarui Micro semiconductor’s IDM chip project.

According to information from the Nanqiao District Government, the Huarui Micro Semiconductor IDM chip project was constructed by Nanjing Huarui Micro Integrated Circuit Co., Ltd. with a total investment of 3 billion yuan. It is the first project to settle in the Pukou-Nanqiao Cooperative Industrial Park. This also further strengthens the industrial cooperation between Nanjing Pukou and Chuzhou Nanqiao.

Source: People’s Government of Nanqiao District

According to previous reports from Chuzhou.com, the project is mainly engaged in the R&D and manufacturing of semiconductor power devices. The first phase of the project has a total investment of 1 billion yuan and a land area of ​​100 acres. The construction period is 3 years. The construction of a 6-inch power device wafer production line is expected to be completed. Annual sales reached 1 billion yuan.

The settlement this time is an important breakthrough for Nanqiao Economic Development Zone to attract investment in the “Yangtze River Delta”, and it is a positive result achieved after Nanqiao Economic Development Zone and Nanjing Jiangbei New Area reached a strategic cooperation agreement.

According to the data, Nanjing Huarui Micro-Integrated Circuit Co., Ltd. was established in May 2018. It is a high-tech enterprise integrating R&D, production, sales and service of power device products. Huarui Micro has successfully developed and mass-produced products including high-voltage VDMOS, low-voltage trench MOS, super junction MOS and SGT MOS. At the same time, it is carrying out the research and development of third-generation semiconductor (SiC, GaN) power devices.

The Links:   MMF200ZV040DK1 SKT552-16E