What does Huawei intend to enter the third generation of semiconductors?

Huawei temporarily withdraws from the high-end market, Huawei releases Hongmeng OS, Huawei assisted driving, etc. News about Huawei is endless. The stories behind this make people realize that technology is the key to seizing the initiative.

Recently, Huawei has made another big news, announcing that Hubble Technology, a subsidiary of Huawei, has officially invested in Dongguan Tianyu Technology semiconductor Company. This company is the first in my country to engage in the development, production and sales of third-generation semiconductor silicon carbide epitaxial wafers. high-tech enterprises.

So, what does Huawei want to enter the semiconductor industry?

What can the advantages of third-generation semiconductors bring to Huawei?

To answer this question, we first need to explain what the third-generation semiconductor is and how it differs from the first and second-generation semiconductors.

The third-generation semiconductor is mainly composed of four semiconductor materials, which are gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO) and diamond, all of which are high-temperature semiconductor materials.

The first-generation semiconductors are mainly composed of silicon (Si) and germanium (Ge), of which silicon is the basis of all logic devices; the second-generation semiconductors are composed of compound conductor materials, mainly gallium arsenide (GaAs) and indium phosphide ( InP).

First, second, and third-generation semiconductors have different functions due to the difference in material composition. Among them, the biggest advantage of the third-generation semiconductor is that it is more in line with the requirements of the current Electronic industry development.For example, silicon carbide (SiC), an important component of the third-generation semiconductor, has three characteristics: high electron saturation speed, high critical magnetic field, and high thermal conductivity. .

Thanks to these advantages, components using third-generation semiconductor technology can be more suitable for high-frequency and high-temperature scenarios, and at the same time can reduce power consumption. At the same time, silicon carbide is also suitable for the manufacture of high-voltage, high-power electronic devices, such as IGBT modular semiconductor products widely used in the new energy automobile industry, thanks to the silicon carbide materials in the third-generation semiconductors.

At the same time, silicon carbide can also be used in inverters, on-board chargers, power control units, etc. in the field of new energy vehicles. It has the characteristics of light weight, high temperature resistance and high efficiency, and can effectively reduce the cost of new energy vehicles. .

It can be seen that Huawei’s investment in third-generation semiconductor technology may be to create momentum for new energy vehicles, connect its own advantages in assisted driving, and achieve a true combination of software and hardware.

In addition, in the third-generation semiconductor technology, gallium nitride (GaN) is also one of the important materials, and it is widely used in fast charging of today’s mobile phones. Compared with the first and second generation semiconductor technologies, the emergence of gallium nitride has the advantages of low resistance, low loss, and high energy conversion rate.

More importantly, it closely follows the current mobile phone development trend and people’s rigid demand for portability. The mobile phone charger using gallium nitride technology not only has the characteristics of low loss and high conversion rate, but also can use the advantages of the material itself to charge The head is compressed to a smaller volume.

At present, OPPO and Xiaomi have made important breakthroughs in the field of fast charging. Among them, OPPO released the first domestic GaN charger SuperVOOC 2.0 as early as 19 years, and the charging power reached 65W. This technology has been as long as one since then. Several models of OPPO mobile phones have been infiltrated within a year, and many consumers are also willing to pay for a faster charging experience.

What does Huawei intend to enter the third generation of semiconductors?

Last year was the year when Xiaomi’s charging technology achieved a revolutionary breakthrough. It was thanks to the third-generation semiconductor technology that the charging head was better compatible with the charging speed of 100 watts, and the size of the charger was further reduced to enhance the performance of Xiaomi mobile phones. Competitiveness.

What does Huawei intend to enter the third generation of semiconductors?

The pressure fell on Huawei.Due to well-known reasons, Huawei suffered an unprecedented blow.It was not until the launch of Hongmeng OS last month that it temporarily recovered a bit of vitality.After slowing down, it began to plan for mobile phone hardware, perhaps the third generation. Semiconductor technology is one part of Huawei’s plan to restart its high-end flagship.

Is there any chance for Huawei, who is now entering the venue?

Nevertheless, investing in third-generation semiconductor technology cannot save Huawei’s decline in chips, because at present, the core processor industry is mainly managed by the first-generation semiconductors, and the second and third-generation main areas are not in the chip field. Are not the same.

At the same time, there are already pioneers such as Wingtech and Sanan Optoelectronics in the third-generation semiconductor field. It is still quite difficult for Huawei to catch up with them after investing.

Although difficult, Huawei can actually learn from the practices of Wingtech and Sanan Optoelectronics. Take Wingtech as an example.Although Huawei does not have production capacity and cannot adopt the ODM model, it can follow the practice of Wingtech after acquiring Nexperia, and use the resources obtained after investing in third-generation semiconductors. Efforts in the battery charging technology of the new energy vehicle industry to promote the research and development of GaN technology may also increase Huawei’s hardware advantages.

Recently, Sanan Optoelectronics has also made major moves. It has established the first silicon carbide vertical integration industry chain in China, in order to use the third-generation semiconductor technology to promote Mini/Micro LED gallium nitride chips, gallium arsenide chips, and 4K displays. Use the development of encapsulation.

Sanan Optoelectronics uses third-generation semiconductor technology to research and develop screen materials that are in line with future development trends. It may provide Huawei with an idea. Perhaps Huawei can also use its existing capital to work hard on screen technology to enhance mobile phones. , Tablet, computer and other product lines.

It is worth mentioning that Sanan Optoelectronics has become a supplier of Samsung Mini/Micro LED chips by virtue of its accumulation of third-generation semiconductor technology. In this regard, Xiaohei believes that this may bring new inspiration to Huawei. .

From the perspective of the previous cooperation between Huawei and Cyrus, Huawei and most manufacturers have a different approach to new energy vehicles. Huawei only provides software for autopilot software for cars. So in fact, it can be reversed. If Huawei makes a breakthrough in screen chips with the help of third-generation semiconductors, does it mean that it can take the initiative in the hardware aspect of the screen field, and in turn provide chips for other screen manufacturers? Is this also true? Can it be one of Huawei’s counterattacks?

Of course, the above situation is only Xiaohei’s guess. From the perspective of Huawei’s current situation, Huawei’s investment in third-generation semiconductors may be just a small attempt by Huawei. It is more focused on the development of its own core business, such as how to break through restrictions. , How to expand the advantages of the Internet of Everything, how to open up a new track, etc.

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